Deposition of reactively ion beam sputtered silicon nitride coatings

An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target

Protective coatings of metal surfaces by cold plasma treatment

The cold plasma techniques for deposition of various types of protective coatings are reviewed. The main advantage of these techniques for deposition of ceramic films is the lower process temperature, which enables heat treating of the metal prior to deposition. In the field of surface hardening of steel, significant reduction of treatment time and energy consumption were obtained. A simple model for the plasma - surface reactions in a cold plasma system is presented, and the plasma deposition techniques are discussed in view of this model

The first passage problem for diffusion through a cylindrical pore with sticky walls

We calculate the first passage time distribution for diffusion through a cylindrical pore with sticky walls. A particle diffusively explores the interior of the pore through a series of binding and unbinding events with the cylinder wall. Through a diagrammatic expansion we obtain first passage time statistics for the particle's exit from the pore. Connections between the model and nucleocytoplasmic transport in cells are discussed.Comment: v2: 13 pages, 6 figures, substantial revision

Sputtered silicon nitride coatings for wear protection

Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition

Some properties of RF sputtered hafnium nitride coatings

Hafnium nitride coatings were deposited by reactive RF sputtering from a hafnium target in nitrogen and argon gas mixtures. The rate of deposition, composition, electrical resistivity and complex index of refraction were investigated as a function of target substrate distance and the fraction nitrogen, (fN2) in the sputtering atmosphere. The relative composition of the coatings is independent on fN2 for values above 0.1. The electric resistivity of the hafnium nitride films changes over 8 orders of magnitude when fN2 changes from 0.10 to 0.85. The index of refraction is almost constant at 2.8(1-0.3i) up to fN2 = 0.40 then decreases to 2.1(1 - 0.01i) for higher values of fN2

Correlations between plasma variables and the deposition process of Si films from chlorosilanes in low pressure RF plasma of argon and hydrogen

The dissociation of chlorosilanes to silicon and its deposition on a solid substrate in a RF plasma of mixtures of argon and hydrogen were investigated as a function of the macrovariables of the plasma. The dissociation mechanism of chlorosilanes and HCl as well as the formation of Si in the plasma state were studied by sampling the plasma with a quadrupole mass spectrometer. Macrovariables such as pressure, net RF power input and locations in the plasma reactor strongly influence the kinetics of dissociation. The deposition process of microcrystalline silicon films and its chlorine contamination were correlated to the dissociation mechanism of chlorosilanes and HCl

Determining physical properties of the cell cortex

Actin and myosin assemble into a thin layer of a highly dynamic network underneath the membrane of eukaryotic cells. This network generates the forces that drive cell and tissue-scale morphogenetic processes. The effective material properties of this active network determine large-scale deformations and other morphogenetic events. For example,the characteristic time of stress relaxation (the Maxwell time)in the actomyosin sets the time scale of large-scale deformation of the cortex. Similarly, the characteristic length of stress propagation (the hydrodynamic length) sets the length scale of slow deformations, and a large hydrodynamic length is a prerequisite for long-ranged cortical flows. Here we introduce a method to determine physical parameters of the actomyosin cortical layer (in vivo). For this we investigate the relaxation dynamics of the cortex in response to laser ablation in the one-cell-stage {\it C. elegans} embryo and in the gastrulating zebrafish embryo. These responses can be interpreted using a coarse grained physical description of the cortex in terms of a two dimensional thin film of an active viscoelastic gel. To determine the Maxwell time, the hydrodynamic length and the ratio of active stress and per-area friction, we evaluated the response to laser ablation in two different ways: by quantifying flow and density fields as a function of space and time, and by determining the time evolution of the shape of the ablated region. Importantly, both methods provide best fit physical parameters that are in close agreement with each other and that are similar to previous estimates in the two systems. We provide an accurate and robust means for measuring physical parameters of the actomyosin cortical layer.It can be useful for investigations of actomyosin mechanics at the cellular-scale, but also for providing insights in the active mechanics processes that govern tissue-scale morphogenesis.Comment: 17 pages, 4 figure

Electronic structure of unidirectional superlattices in crossed electric and magnetic fields and related terahertz oscillations

We have studied Bloch electrons in a perfect unidirectional superlattice subject to crossed electric and magnetic fields, where the magnetic field is oriented ``in-plane'', i.e. in parallel to the sample plane. Two orientation of the electric field are considered. It is shown that the magnetic field suppresses the intersubband tunneling of the Zener type, but does not change the frequency of Bloch oscillations, if the electric field is oriented perpendicularly to both the sample plane and the magnetic field. The electric field applied in-plane (but perpendicularly to the magnetic field) yields the step-like electron energy spectrum, corresponding to the magnetic-field-tunable oscillations alternative to the Bloch ones.Comment: 7 pages, 1 figure, accepted for publication in Phys. Rev.

Spindle Positioning by Cortical Pulling Forces

SummaryProper spatial control of the cell division plane is essential to any developing organism. In most cell types, the relative size of the two daughter cells is determined by the position of the mitotic spindle within the geometry of the mother cell. We review the underlying mechanisms responsible for positioning of the mitotic spindle, both in cases where the spindle is placed in the center of the cell and in cases where the spindle is placed away from the center of the cell. We discuss the idea that cortical pulling forces are sufficient to provide a general mechanism for spindle positioning within symmetrically and asymmetrically dividing cells